2W RF AMPLIFIER WITH MOSFET LF2810A CIRCUIT SCHEAMTIC DIAGRAM

2W RF AMPLIFIER WITH MOSFET LF2810A CIRCUIT SCHEAMTIC DIAGRAM

The amplifier is based on the M/A-Com LF2810A MOSFET. The transistor is actually a 10 watt, 28 volt part, but provides adequate gain for this application at 12 VDC. The amplifier provides greater than 40% efficiency at the desired output power. Trimmer capacitors are used for input and output matching. Output power is adjusted by a trimpot which sets the gate bias voltage.

2W RF AMPLIFIER WITH MOSFET LF2810A CIRCUIT SCHEMATIC DIAGRAM

2W RF AMPLIFIER WITH MOSFET LF2810A CIRCUIT SCHEMATIC DIAGRAM

The amplifier is based on the M/A-Com LF2810A MOSFET. The transistor is actually a 10 watt, 28 volt part, but provides adequate gain for this application at 12 VDC. The amplifier provides greater than 40% efficiency at the desired output power. Trimmer capacitors are used for input and output matching. Output power is adjusted by a trimpot which sets the gate bias voltage.

70W HIGH POWER AMPLIFIER WITH MOSFET CIRCUIT SCHEMATIC DIAGRAM

70W HIGH POWER AMPLIFIER WITH MOSFET CIRCUIT SCHEMATIC DIAGRAM
There are possible alternative input stage transistors, the Toshiba 2SA970BL and 2SC2240BL, which appear to be good substitutes for the Hitachi 2SA1085E and 2SC2547E. The ‘BL’ suffix is the high gain group. Alternatives for the Sanyo 2SC2911 and 2SA1209 are the Toshiba 2SC3423 and 2SA1360.

CIRCUIT 800W AUDIO AMPLIFIER WITH MOSFET SCHEMATIC DIAGRAM

CIRCUIT 800W AUDIO AMPLIFIER WITH MOSFET SCHEMATIC DIAGRAM
This amplifier can be used for practically any application that requires high power, low noise, distortion and excellent sound. Examples would be Sub-woofer amp, FOH stage amplifier, One channel of a very high-powered surround sound amplifier etc.